v rrm = 30 v - 40 v i f(av) = 50 a features ? high surge capability do-5 package ? types from 30 v to 40v v rrm ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v 1n6097 thru 1N6098R 2. reverse polarity (r): stud is anode. silicon power schottk y diode 21 30 maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 30 conditions 1n6097 (r) 1n6098 (r) 40 28 40 dc blocking voltage v dc v operating temperature t j c storage temperature t stg c parameter symbol unit average forward current (per pkg) i f(av) a maximum instantaneous forward voltage (per leg) thermal characteristics maximum thermal resistance, junction - case (per leg) r jc c/w inch ponds (in-pb) peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 800 800 mounting torque 30 30 t j = 100c 10 10 t j = 25 c i fm = 50 a, t j = 25 c maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f electrical characteristics, at tj = 25 c, unless otherwise specified -55 to 150 ma v conditions t j = 150 c 1 1n6097 (r) 1n6098 (r) 0.7 t c = 125 c a 1 20 20 1.30 30 50 50 -55 to 150 40 1.30 0.7 -55 to 150 -55 to 150 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
1n6097 thru 1N6098R www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. 1n6097 thru 1N6098R do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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